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H5TC4G63CFR - PBAR DDR3 DRAM Memory Chip 256MX16 CMOS PBGA96 Dram Module

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H5TC4G63CFR - PBAR DDR3 DRAM Memory Chip 256MX16 CMOS PBGA96 Dram Module

Model Number : H5TC4G63CFR-PBAR

Certification : ORIGINAL PARTS

MOQ : one package

Price : Negotiation

Payment Terms : T/T, PayPal, Western Union, Escrow and others

Supply Ability : 30k per month

Packaging Details : 10cmX10cmX5cm

Item No. : H5TC4G63CFR-PBAR

Memory Width : 16

Memory Density : 4GB

Package : PBGA-96

Memory IC TypeLE : DRAM MODULE

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H5TC4G63CFR-PBAR DDR3 DRAM Memory ( 256MX16, CMOS, PBGA96)

H5TC4G63CFR - PBAR DDR3 DRAM Memory Chip 256MX16 CMOS PBGA96 Dram Module

The parts are a 4Gb low power Double Data Rate III (DDR3L) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density, high bandwidth and low power operation at 1.35V. SK Hynix DDR3L SDRAM provides backward compatibility with the 1.5V DDR3 based environment without any changes. SK Hynix 4Gb DDR3L
SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While
all addresses and control inputs are latched on the rising edges of the clock (falling edges of the clock),
data, data strobes and write data masks inputs are sampled on both rising and falling edges of it. The data
paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

SPECIFICATIONS

Mfr Package Description FBGA-96
REACH Compliant Yes
EU RoHS Compliant Yes
China RoHS Compliant Yes
Status Active
Access Mode MULTI BANK PAGE BURST
JESD-30 Code R-PBGA-B96
Memory Density 4.294967296E9 bit
Memory IC Type DRAM MODULE
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 96
Number of Words 2.68435456E8 words
Number of Words Code 256M
Operating Mode SYNCHRONOUS
Operating Temperature-Min 0.0 Cel
Operating Temperature-Max 85.0 Cel
Organization 256MX16
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Seated Height-Max 1.2 mm
Supply Voltage-Nom (Vsup) 1.35 V
Supply Voltage-Min (Vsup) 1.283 V
Supply Voltage-Max (Vsup) 1.45 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 20
Length 13.0 mm
Width 7.5 mm
Additional Feature AUTO/SELF REFRESH

Product Tags:

dynamic random access memory

      

ram memory ic

      
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