Low Power Flash Memory Ic Chip 64Mx16 BGA84 W971GG6JB-18 IC SDRAM DDR2

Flash Memory Chip W971GG6JB-18 , IC SDRAM DDR2 64Mx16 Memory chip BGA84

The W971GG6JB is a 1G bits DDR2 SDRAM, organized as 8,388,608 words x 8 banks x 16 bits. This device achieves high speed transfer rates up to 1066Mb/sec/pin (DDR2-1066) for various applications. W971GG6JB is sorted into the following grade parts: -18, -25, 25L, 25I, 25A, 25K and -3. The -18 grade parts is compliant to the DDR2-1066 (6-6-6) specification. The -25/25L/25I/25A/25K grade parts are compliant to the DDR2-800 (5-5-5) specification (the 25L grade parts is guaranteed to support IDD2P = 7 mA and IDD6 = 4 mA at commercial temperature, the 25I industrial grade parts is guaranteed to support -40°C ≤ TCASE ≤ 95°C). The -3 grade parts is compliant to the DDR2-667 (5-5-5) specification.

The automotive grade parts temperature, if offered, has two simultaneous requirements: ambient temperature (TA) surrounding the device cannot be less than -40°C or greater than +95°C (for 25A), +105°C (for 25K), and the case temperature (TCASE) cannot be less than -40°C or greater than +95°C (for 25A), +105°C (for 25K). JEDEC specifications require the refresh rate to double when TCASE exceeds +85°C; this also requires use of the high-temperature self refresh option. Additionally, ODT resistance and the input/output impedance must be derated when TCASE is < 0°C or > +85°C.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CLK rising and NOT CLK falling). All I/Os are synchronized with a single ended DQS or differential DQS- NOT DQS pair in a source synchronous fashion.

Feature:

Features

• Power Supply: VDD, VDDQ = 1.8 V ± 0.1 V
• Double Data Rate architecture: two data transfers per clock cycle
• CAS Latency: 3, 4, 5, 6 and 7
• Burst Length: 4 and 8
• Bi-directional, differential data strobes (DQS and NOT DQS ) are transmitted / received with data
• Edge-aligned with Read data and center-aligned with Write data
• DLL aligns DQ and DQS transitions with clock
• Differential clock inputs (CLK and NOT CLK )
• Data masks (DM) for write data
• Commands entered on each positive CLK edge, data and data mask are referenced to both edges of DQS
• Posted NOT CAS programmable additive latency supported to make command and data bus efficiency
• Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
• Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality
• Auto-precharge operation for read and write bursts
• Auto Refresh and Self Refresh modes
• Precharged Power Down and Active Power Down
• Write Data Mask
• Write Latency = Read Latency - 1 (WL = RL - 1)
• Interface: SSTL_18
• Packaged in WBGA 84 Ball (8X12.5 mm²), using Lead free materials with RoHS compliant

nand type flash memory

flash memory controller chip

Low Power Flash Memory Ic Chip 64Mx16 BGA84 W971GG6JB-18 IC SDRAM DDR2 Images